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 Transistors
2SB0789, 2SB0789A (2SB789, 2SB789A)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency driver amplification Features
* High collector-emitter voltage (Base open) VCEO * Large collector power dissipation PC
4.50.1 1.60.2 1.50.1
4.0+0.25 -0.20
2.50.1 3
0.40.04
0.40.08 1.50.1
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) 2SB0789 2SB0789A VCEO VEBO IC ICP PC Tj Tstg cm2 Symbol VCBO Rating -100 -120 -100 -120 -5 - 0.5 -1 1 150 -55 to +150 V A A W C C V Unit V
3
1.0+0.1 -0.2
1
3 2 0.50.08
45
3.00.15
Collector-emitter voltage 2SB0789 (Base open) 2SB0789A
Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation * Junction temperature Storage temperature
1: Base 2: Collector 3: Emitter MiniP3-F1 Package
Marking Symbol: * 2SB0789: D * 2SB0789A: E
Note) *: Print circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion.
Electrical Characteristics Ta = 25C 3C
Parameter Collector-emitter voltage (Base open) 2SB0789 2SB0789A VEBO hFE1
*2
Symbol VCEO
Conditions IC = -100 A, IB = 0 IE = -10 A, IC = 0 VCE = -10 V, IC = -150 mA VCE = -5 V, IC = -500 mA IC = -500 mA, IB = -50 mA IC = -500 mA, IB = -50 mA VCB = -10 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz
Min -100 -120 -5 90 50
Typ
Max
Unit V
Emitter-base voltage (Collector open) Forward current transfer ratio
*1
V 220 - 0.2 - 0.85 120 30 - 0.6 -1.20 V V MHz pF
hFE2 Collector-emitter saturation voltage *1 Base-emitter saturation voltage *1 Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE1 Q 90 to 155 R 130 to 220 Note) The part number in the parenthesis shows conventional part number.
Publication date: December 2002 SJC00056CED
0.4 max.
2.60.1
1
2SB0789, 2SB0789A
PC Ta
1.4
-1.2
IC VCE
Ta = 25C -18 mA -16 mA -14 mA IB = -20 mA
IC I B
-1.2 VCE = -10 V Ta = 25C
Collector power dissipation PC (W)
1.2 1.0 0.8 0.6 0.4 0.2 0
Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness
-1.0
-1.0
Collector current IC (A)
- 0.8
- 0.6
- 0.4 mA
- 0.4
- 0.2 mA
- 0.2
0
Collector current IC (A)
-12 mA -10 mA - 0.8 mA - 0.6 mA
- 0.8
- 0.6
- 0.4
- 0.2
0
20
40
60
80 100 120 140 160
0
-2
-4
-6
-8
-10
-12
0
0
-5
-10
-15
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base current IB (mA)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-100
VBE(sat) IC
-100
hFE IC
600 VCE = -10 V
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 10
IC / IB = 10
Forward current transfer ratio hFE
500
-10
-10
400
25C -1
-1
Ta = 75C 25C -25C
Ta = -25C 75C
300 Ta = 75C 200 25C -25C 100
- 0.1
- 0.1
- 0.01 - 0.01
- 0.1
-1
-10
- 0.01 - 0.01
- 0.1
-1
-10
0 - 0.01
- 0.1
-1
-10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
fT I E
Collector output capacitance C (pF) (Common base, input open circuited) ob
200 180 VCB = -10 V Ta = 25C 50
Cob VCB
IE = 0 f = 1 MHz Ta = 25C
Transition frequency fT (MHz)
160 140 120 100 80 60 40 20 0 1 10 100
40
30
20
10
0 -1
-10
-100
Emitter current IE (mA)
Collector-base voltage VCB (V)
2
SJC00056CED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL


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